2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
2SK3309(TE24L,Q)
GET PRICE
RFQ
28,280
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 450V 10A TO220SM - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220SM 65W (Tc) N-Channel 450V 10A (Ta) 650 mOhm @ 5A, 10V 5V @ 1mA 23nC @ 10V 920pF @ 10V 10V ±30V
Default Photo
GET PRICE
RFQ
36,820
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 450V 10A TO220FL - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3, Short Tab TO-220FL 65W (Tc) N-Channel 450V 10A (Ta) 650 mOhm @ 5A, 10V 5V @ 1mA 23nC @ 10V 920pF @ 10V 10V ±30V
Page 1 / 1