Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$0.96
RFQ
70,420
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 60V 119A TO220AB Automotive, AEC-Q101, TrenchFET® Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 175W (Tc) N-Channel - 60V 119A (Tc) 6 mOhm @ 30A, 10V 3.5V @ 250µA 145nC @ 10V 6495pF @ 25V 10V ±20V
SQM120N06-06_GE3
Per Unit
$0.87
RFQ
37,300
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 60V 120A TO263 Automotive, AEC-Q101, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 230W (Tc) N-Channel - 60V 120A (Tc) 6 mOhm @ 30A, 10V 3.5V @ 250µA 145nC @ 10V 6495pF @ 25V 10V ±20V
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