Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
APTM120DA30CT1G
Per Unit
$27.47
RFQ
50,760
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 1200V 31A SP1 POWER MOS 8™ Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP1 SP1 657W (Tc) N-Channel 1200V 31A (Tc) 360 mOhm @ 25A, 10V 5V @ 2.5mA 560nC @ 10V 14560pF @ 25V 10V ±30V
IPB120N04S4L02ATMA1
Per Unit
$0.56
RFQ
68,600
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH TO263-3 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 158W (Tc) N-Channel 40V 120A (Tc) 1.7 mOhm @ 100A, 10V 2.2V @ 110µA 190nC @ 10V 14560pF @ 25V 4.5V, 10V +20V, -16V
Default Photo
Per Unit
$19.71
RFQ
54,740
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 1200V 31A SP1 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP1 SP1 657W (Tc) N-Channel 1200V 31A (Tc) 360 mOhm @ 25A, 10V 5V @ 2.5mA 560nC @ 10V 14560pF @ 25V 10V ±30V
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