Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
12,460
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Microsemi Corporation MOSFET N-CH 700V SOT227 - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 273W (Tc) N-Channel 700V 78A (Tc) 45 mOhm @ 60A, 20V 2.4V @ 1mA 270nC @ 20V 3950pF @ 700V 20V +25V, -10V
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RFQ
59,700
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Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 556W (Tc) N-Channel 700V 110A (Tc) 45 mOhm @ 60A, 20V 2.4V @ 1mA 220nC @ 20V 3950pF @ 700V 20V +25V, -10V
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