- Manufacture :
- Packaging :
- Technology :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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14 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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52,600
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|
Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 2080pF @ 800V | 18V | +22V, -6V | |||
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25,480
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|
Rohm Semiconductor | MOSFET N-CH 650V 29A TO-220AB | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | 650V | 29A (Tc) | 156 mOhm @ 10A, 18V | 4V @ 3.3mA | 61nC @ 18V | 1200pF @ 500V | 18V | +22V, -6V | |||
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40,900
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|
Rohm Semiconductor | MOSFET N-CH 1200V 14A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 108W (Tc) | N-Channel | 1200V | 14A (Tc) | 364 mOhm @ 4A, 18V | 4V @ 1.4mA | 36nC @ 18V | 667pF @ 800V | 18V | +22V, -6V | |||
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40,000
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|
Rohm Semiconductor | MOSFET N-CH 1700V 3.7A | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 35W (Tc) | N-Channel | 1700V | 3.7A (Tc) | 1.5 Ohm @ 1.1A, 18V | 4V @ 900µA | 14nC @ 18V | 184pF @ 800V | 18V | +22V, -6V | |||
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GET PRICE |
53,840
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|
Rohm Semiconductor | 1700V .75 OHM 6A SIC FET | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 57W (Tc) | N-Channel | 1700V | 5.9A (Tc) | 975 mOhm @ 1.7A, 18V | 4V @ 630µA | 17nC @ 18V | 275pF @ 800V | 18V | +22V, -6V | ||
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69,140
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|
Rohm Semiconductor | 1700V .75 OHM 6A SIC FET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 57W (Tc) | N-Channel | 1700V | 5.9A (Tc) | 975 mOhm @ 1.7A, 18V | 4V @ 630µA | 17nC @ 18V | 275pF @ 800V | 18V | +22V, -6V | |||
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67,360
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|
Rohm Semiconductor | 1700V .75 OHM 6A SIC FET | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 57W (Tc) | N-Channel | 1700V | 5.9A (Tc) | 975 mOhm @ 1.7A, 18V | 4V @ 630µA | 17nC @ 18V | 275pF @ 800V | 18V | +22V, -6V | |||
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GET PRICE |
67,200
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|
Rohm Semiconductor | 1700V 1.2 OHM 4A SIC FET | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 44W (Tc) | N-Channel | 1700V | 4A (Tc) | 1.5 Ohm @ 1.1A, 18V | 4V @ 410µA | 14nC @ 18V | 184pF @ 800V | 18V | +22V, -6V | ||
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69,100
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Rohm Semiconductor | 1700V 1.2 OHM 4A SIC FET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 44W (Tc) | N-Channel | 1700V | 4A (Tc) | 1.5 Ohm @ 1.1A, 18V | 4V @ 410µA | 14nC @ 18V | 184pF @ 800V | 18V | +22V, -6V | |||
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35,740
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|
Rohm Semiconductor | 1700V 1.2 OHM 4A SIC FET | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 44W (Tc) | N-Channel | 1700V | 4A (Tc) | 1.5 Ohm @ 1.1A, 18V | 4V @ 410µA | 14nC @ 18V | 184pF @ 800V | 18V | +22V, -6V | |||
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13,800
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|
Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 1850pF @ 800V | 18V | +22V, -6V | |||
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54,100
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|
Littelfuse Inc. | MOSFET SIC 1200V 25A TO-247-3L | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C | Through Hole | TO-247-3 | TO-247-3 | 179W (Tc) | N-Channel | 1200V | 39A (Tc) | 100 mOhm @ 20A, 20V | 4V @ 10mA | 95nC @ 20V | 1825pF @ 800V | 20V | +22V, -6V | |||
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37,440
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Rohm Semiconductor | MOSFET N-CH 1200V 22A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | 1200V | 22A (Tc) | 208 mOhm @ 7A, 18V | 4V @ 2.5mA | 62nC @ 18V | 1200pF @ 800V | 18V | +22V, -6V | |||
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35,500
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Rohm Semiconductor | MOSFET N-CH 1200V 10A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 85W (Tc) | N-Channel | 1200V | 10A (Tc) | 585 mOhm @ 3A, 18V | 4V @ 900µA | 27nC @ 18V | 463pF @ 800V | 18V | +22V, -6V |
