Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPD075N03LGBTMA1
Per Unit
$0.16
RFQ
33,120
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 50A TO252-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 47W (Tc) N-Channel - 30V 50A (Tc) 7.5 mOhm @ 30A, 10V 2.2V @ 250µA 18nC @ 10V 1900pF @ 15V 4.5V, 10V ±20V
IPD040N03LGBTMA1
Per Unit
$0.21
RFQ
54,680
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 90A TO252-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 79W (Tc) N-Channel - 30V 90A (Tc) 4 mOhm @ 30A, 10V 2.2V @ 250µA 38nC @ 10V 3900pF @ 15V 4.5V, 10V ±20V
IPD050N03LGBTMA1
Per Unit
$0.20
RFQ
41,780
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 50A TO252-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 68W (Tc) N-Channel - 30V 50A (Tc) 5 mOhm @ 30A, 10V 2.2V @ 250µA 31nC @ 10V 3200pF @ 15V 4.5V, 10V ±20V
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