2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF6601
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RFQ
53,000
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Infineon Technologies MOSFET N-CH 20V 26A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MT DIRECTFET™ MT 3.6W (Ta), 42W (Tc) N-Channel - 20V 26A (Ta), 85A (Tc) 3.8 mOhm @ 26A, 10V 2.2V @ 250µA 45nC @ 4.5V 3440pF @ 15V 4.5V, 10V ±20V
IRF6601
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RFQ
32,640
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Infineon Technologies MOSFET N-CH 20V 26A DIRECTFET HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) - Surface Mount DirectFET™ Isometric MT DIRECTFET™ MT 3.6W (Ta), 42W (Tc) N-Channel - 20V 26A (Ta), 85A (Tc) 3.8 mOhm @ 26A, 10V 2.2V @ 250µA 45nC @ 4.5V 3440pF @ 15V 4.5V, 10V ±20V
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