- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
68,240
One step to sell excess stocks.Or submit Qty to get quotes
|
Global Power Technologies Group | MOSFET N-CH 900V 7A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 250W (Tc) | N-Channel | - | 900V | 7A (Tc) | 1.9 Ohm @ 3.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1969pF @ 25V | 10V | ±30V | ||
|
|
68,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 7A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 40.3W (Tc) | N-Channel | - | 900V | 7A (Tc) | 1.9 Ohm @ 3.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1969pF @ 25V | 10V | ±30V | |||
|
|
35,220
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 90A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 126W (Tc) | N-Channel | - | 100V | 90A (Tc) | 8.2 mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | 10V | ±20V |
