4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP1M007A090H
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RFQ
68,240
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Global Power Technologies Group MOSFET N-CH 900V 7A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 250W (Tc) N-Channel 900V 7A (Tc) 1.9 Ohm @ 3.5A, 10V 4V @ 250µA 49nC @ 10V 1969pF @ 25V 10V ±30V
GP1M007A090FH
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RFQ
40,120
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Global Power Technologies Group MOSFET N-CH 900V 7A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 40.3W (Tc) N-Channel 900V 7A (Tc) 1.9 Ohm @ 3.5A, 10V 4V @ 250µA 49nC @ 10V 1969pF @ 25V 10V ±30V
TSM7N90CZ C0G
Per Unit
$1.60
RFQ
68,500
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 900V 7A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 40.3W (Tc) N-Channel 900V 7A (Tc) 1.9 Ohm @ 3.5A, 10V 4V @ 250µA 49nC @ 10V 1969pF @ 25V 10V ±30V
TSM7N90CI C0G
Per Unit
$1.69
RFQ
68,180
One step to sell excess stocks.Or submit Qty to get quotes
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 900V 7A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40.3W (Tc) N-Channel 900V 7A (Tc) 1.9 Ohm @ 3.5A, 10V 4V @ 250µA 49nC @ 10V 1969pF @ 25V 10V ±30V
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