Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHD23NQ10T,118
GET PRICE
RFQ
45,300
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 100V 23A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 100W (Tc) N-Channel - 100V 23A (Tc) 70 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 1187pF @ 25V 10V ±20V
PHP23NQ11T,127
Per Unit
$0.53
RFQ
20,800
One step to sell excess stocks.Or submit Qty to get quotes
Nexperia USA Inc. MOSFET N-CH 110V 23A TO220AB TrenchMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 110V 23A (Tc) 70 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 830pF @ 25V 10V ±20V
Page 1 / 1