2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHX23NQ11T,127
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RFQ
64,200
One step to sell excess stocks.Or submit Qty to get quotes
NXP USA Inc. MOSFET N-CH 110V 16A SOT186A TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 41.6W (Tc) N-Channel - 110V 16A (Tc) 70 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 830pF @ 25V 10V ±20V
PHP23NQ11T,127
Per Unit
$0.53
RFQ
20,800
One step to sell excess stocks.Or submit Qty to get quotes
Nexperia USA Inc. MOSFET N-CH 110V 23A TO220AB TrenchMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 110V 23A (Tc) 70 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 830pF @ 25V 10V ±20V
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