Supplier Device Package :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQPF4N90C
Per Unit
$0.86
RFQ
55,880
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 900V 4A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 47W (Tc) N-Channel - 900V 4A (Tc) 4.2 Ohm @ 2A, 10V 5V @ 250µA 22nC @ 10V 960pF @ 25V 10V ±30V
FQPF4N90CT
Per Unit
$0.86
RFQ
32,900
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 900V 4A QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 47W (Tc) N-Channel - 900V 4A (Tc) 4.2 Ohm @ 2A, 10V 5V @ 250µA 22nC @ 10V 960pF @ 25V 10V ±30V
FQP4N90C
Per Unit
$0.79
RFQ
79,560
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 900V 4A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 140W (Tc) N-Channel - 900V 4A (Tc) 4.2 Ohm @ 2A, 10V 5V @ 250µA 22nC @ 10V 960pF @ 25V 10V ±30V
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