- Manufacture :
- Part Status :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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57,060
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|
Vishay Siliconix | MOSFET N-CH 400V 5.5A TO-262 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 74W (Tc) | N-Channel | - | 400V | 5.5A (Tc) | 1 Ohm @ 3.3A, 10V | 4.5V @ 250µA | 22nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
|
58,200
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|
IXYS | MOSFET N-CH 800V 2A TO-263 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 54W (Tc) | N-Channel | - | 800V | 2A (Tc) | 6.2 Ohm @ 500mA, 10V | 5.5V @ 250µA | 22nC @ 10V | 440pF @ 25V | 10V | ±20V | ||||
|
GET PRICE |
17,860
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|
Vishay Siliconix | MOSFET N-CH 400V 5.5A TO-262 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 74W (Tc) | N-Channel | - | 400V | 5.5A (Tc) | 1 Ohm @ 3.3A, 10V | 4.5V @ 250µA | 22nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
|
55,320
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|
Rohm Semiconductor | MOSFET N-CH 600V 11A TO220FM | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 53W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 11A (Tc) | 390 mOhm @ 3.8A, 10V | 5V @ 1mA | 22nC @ 10V | 740pF @ 25V | 10V | ±20V |