- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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63,840
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|
NXP USA Inc. | MOSFET N-CH 110V 7.5A SOT186A | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 27.7W (Tc) | N-Channel | - | 110V | 7.5A (Tc) | 180 mOhm @ 6A, 10V | 4V @ 1mA | 14.7nC @ 10V | 360pF @ 25V | 10V | ±20V | ||
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45,820
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|
NXP USA Inc. | MOSFET N-CH 100V 10.9A SOT533 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 57.7W (Tc) | N-Channel | - | 100V | 10.9A (Tc) | 180 mOhm @ 9A, 10V | 4V @ 1mA | 14.7nC @ 10V | 360pF @ 25V | 10V | ±20V | ||
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GET PRICE |
74,320
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|
Diodes Incorporated | MOSFET N-CH 30V 12A PWRDI3333-8 | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 890mW (Ta) | N-Channel | Schottky Diode (Body) | 30V | 12A (Ta) | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | 4310pF @ 15V | 4.5V, 10V | ±20V | ||
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GET PRICE |
61,240
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|
Diodes Incorporated | MOSFET N-CH 30V 12A PWRDI3333-8 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 890mW (Ta) | N-Channel | Schottky Diode (Body) | 30V | 12A (Ta) | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | 4310pF @ 15V | 4.5V, 10V | ±20V | ||
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|
|
73,300
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|
Diodes Incorporated | MOSFET N-CH 30V 12A PWRDI3333-8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 890mW (Ta) | N-Channel | Schottky Diode (Body) | 30V | 12A (Ta) | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | 4310pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
GET PRICE |
74,740
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|
Diodes Incorporated | MOSFET N-CH 30V 12A POWERDI | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 890mW (Ta) | N-Channel | Schottky Diode (Body) | 30V | 12A (Ta) | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | 4310pF @ 15V | 4.5V, 10V | ±20V | ||
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|
21,280
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|
Diodes Incorporated | MOSFET N-CH 30V 12A POWERDI | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 890mW (Ta) | N-Channel | Schottky Diode (Body) | 30V | 12A (Ta) | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | 4310pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
24,620
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|
Diodes Incorporated | MOSFET N-CH 30V 12A POWERDI | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 890mW (Ta) | N-Channel | Schottky Diode (Body) | 30V | 12A (Ta) | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | 4310pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
GET PRICE |
30,040
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|
Diodes Incorporated | MOSFET N-CH 30V 12A POWERDI | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 890mW (Ta) | N-Channel | Schottky Diode (Body) | 30V | 12A (Ta) | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | 4310pF @ 15V | 4.5V, 10V | ±20V | ||
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|
|
39,720
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET N-CH 30V 12A POWERDI | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 890mW (Ta) | N-Channel | Schottky Diode (Body) | 30V | 12A (Ta) | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | 4310pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
20,460
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET N-CH 30V 12A POWERDI | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 890mW (Ta) | N-Channel | Schottky Diode (Body) | 30V | 12A (Ta) | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | 4310pF @ 15V | 4.5V, 10V | ±20V |
