Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDP5N50
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RFQ
61,320
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ON Semiconductor MOSFET N-CH 500V 5A TO-220 UniFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 85W (Tc) N-Channel 500V 5A (Tc) 1.4 Ohm @ 2.5A, 10V 5V @ 250µA 15nC @ 10V 640pF @ 25V 10V ±30V
IRFZ24
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RFQ
77,180
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Vishay Siliconix MOSFET N-CH 60V 17A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 60W (Tc) N-Channel 60V 17A (Tc) 100 mOhm @ 10A, 10V 4V @ 250µA 25nC @ 10V 640pF @ 25V 10V ±20V
IRFZ24PBF
Per Unit
$0.75
RFQ
59,180
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 60V 17A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 60W (Tc) N-Channel 60V 17A (Tc) 100 mOhm @ 10A, 10V 4V @ 250µA 25nC @ 10V 640pF @ 25V 10V ±20V
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