- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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39,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET P-CH 30V 9.8A 8SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 9.8A (Ta) | 17.5 mOhm @ 9.8A, 10V | 2.4V @ 25µA | 41nC @ 10V | 1270pF @ 25V | 4.5V, 10V | ±20V | |||
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78,660
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET P-CH 30V 9.8A 8SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 9.8A (Ta) | 12.1 mOhm @ 7.8A, 20V | 2.4V @ 25µA | 14nC @ 4.5V | 1270pF @ 25V | 10V, 20V | ±25V |
