Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF9392PBF
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RFQ
42,200
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Infineon Technologies MOSFET P-CH 30V 9.8A 8SOIC HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 9.8A (Ta) 12.1 mOhm @ 7.8A, 20V 2.4V @ 25µA 14nC @ 4.5V 1270pF @ 25V 10V, 20V ±25V
IRF9332PBF
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30,740
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Infineon Technologies MOSFET P-CH 30V 9.8A 8SOIC HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 9.8A (Ta) 17.5 mOhm @ 9.8A, 10V 2.4V @ 25µA 41nC @ 10V 1270pF @ 25V 4.5V, 10V ±20V
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