Reverse Recovery Time (trr) :
Current - Collector (Ic) (Max) :
Voltage - Collector Emitter Breakdown (Max) :
Vce(on) (Max) @ Vge, Ic :
Current - Collector Pulsed (Icm) :
Gate Charge :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package Reverse Recovery Time (trr) Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) IGBT Type Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
FGA60N60UFDTU
Per Unit
$3.12
RFQ
71,440
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor IGBT 600V 120A 298W TO3P - Active Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 298W TO-3P 47ns 120A 600V Field Stop 2.4V @ 15V, 60A 180A 1.81mJ (on), 810µJ (off) 188nC 23ns/130ns 400V, 60A, 5 Ohm, 15V
FGA20N120FTDTU
Per Unit
$2.22
RFQ
21,600
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor IGBT 1200V 40A 298W TO3PN - Active Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 298W TO-3P 447ns 40A 1200V Trench Field Stop 2V @ 15V, 20A 60A - 137nC - -
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