- Manufacture :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- IGBT Type :
- Vce(on) (Max) @ Vge, Ic :
- Td (on/off) @ 25°C :
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7 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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46,280
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|
Microsemi Corporation | IGBT 1200V 200A 833W TMAX | - | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | 833W | - | - | 200A | 1200V | Trench Field Stop | 2.1V @ 15V, 75A | 225A | 8045µJ (on), 7640µJ (off) | 425nC | 60ns/620ns | 800V, 75A, 1 Ohm, 15V | ||||
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76,720
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|
Infineon Technologies | IGBT 600V TO247-3 | Automotive, AEC-Q101, TrenchStop™ | Not For New Designs | Tube | Standard | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 833W | PG-TO247-3-46 | 280ns | 160A | 600V | Trench Field Stop | 2V @ 15V, 120A | 480A | 4.1mJ (on), 2.8mJ (off) | 772nC | 33ns/310ns | 400V, 120A, 3 Ohm, 15V | ||||
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40,660
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|
Microsemi Corporation | IGBT 600V 100A 833W TMAX | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | 833W | - | - | 100A | 600V | PT | 2.7V @ 15V, 65A | 250A | 605µJ (on), 896µJ (off) | 210nC | 30ns/91ns | 400V, 65A, 5 Ohm, 15V | ||||
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50,280
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|
Microsemi Corporation | IGBT 1200V 200A 833W TO264 | - | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | 833W | TO-264 [L] | - | 200A | 1200V | Trench Field Stop | 2.1V @ 15V, 75A | 225A | 8620µJ (on), 11400µJ (off) | 425nC | 60ns/620ns | 800V, 75A, 1 Ohm, 15V | ||||
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76,800
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|
Infineon Technologies | IGBT 600V 160A TO247-3-46 | TrenchStop™ | Active | Tube | Standard | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 833W | PG-TO247-3-46 | 241ns | 160A | 600V | Trench Field Stop | 2V @ 15V, 120A | 480A | 6.2mJ (on), 5.9mJ (off) | 703nC | 50ns/565ns | 400V, 120A, 3 Ohm, 15V | ||||
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56,480
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|
Microsemi Corporation | IGBT 600V 198A 833W TO264 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | 833W | - | - | 198A | 600V | PT | 2.7V @ 15V, 65A | 250A | 605µJ (on), 895µJ (off) | 210nC | 30ns/90ns | 400V, 65A, 5 Ohm, 15V | ||||
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56,300
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | IC DISCRETE 600V TO247-3 | Automotive, AEC-Q101, TrenchStop™ | Active | - | Standard | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 833W | PG-TO247-3-46 | - | 160A | 600V | Trench Field Stop | 2V @ 15V, 120A | 480A | 4.1mJ (on), 2.8mJ (off) | 772nC | 33ns/310ns | 400V, 120A, 3 Ohm, 15V |