Supplier Device Package :
Reverse Recovery Time (trr) :
Gate Charge :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package Reverse Recovery Time (trr) Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) IGBT Type Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
APT68GA60LD40
Per Unit
$5.30
RFQ
13,040
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation IGBT 600V 121A 520W TO-264 POWER MOS 8™ Active Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA 520W TO-264 [L] 22ns 121A 600V PT 2.5V @ 15V, 40A 202A 715µJ (on), 607µJ (off) 198nC 21ns/133ns 400V, 40A, 4.7 Ohm, 15V
APT68GA60B2D40
Per Unit
$5.30
RFQ
61,180
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation IGBT 600V 121A 520W TO-247 POWER MOS 8™ Active Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant 520W - - 121A 600V PT 2.5V @ 15V, 40A 202A 715µJ (on), 607µJ (off) 198nC 21ns/133ns 400V, 40A, 4.7 Ohm, 15V
APT68GA60B
Per Unit
$5.12
RFQ
13,520
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation IGBT 600V 121A 520W TO-247 POWER MOS 8™ Active Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-247-3 520W TO-247 [B] - 121A 600V PT 2.5V @ 15V, 40A 202A 715µJ (on), 607µJ (off) 298nC 21ns/133ns 400V, 40A, 4.7 Ohm, 15V
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