2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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57,300
One step to sell excess stocks.Or submit Qty to get quotes
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Microsemi Corporation | IGBT 600V 96A 416W TO247 | - | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 416W | TO-247 [B] | - | 96A | 600V | PT | 2.5V @ 15V, 32A | 161A | 534µJ (on), 466µJ (off) | 28nC | 17ns/112ns | 400V, 32A, 4.7 Ohm, 15V | |||
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35,700
One step to sell excess stocks.Or submit Qty to get quotes
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Microsemi Corporation | IGBT 600V 96A 416W TO-247 | POWER MOS 8™ | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 416W | TO-247 [B] | - | 96A | 600V | PT | 2.5V @ 15V, 32A | 161A | 534µJ (on), 466µJ (off) | 158nC | 17ns/112ns | 400V, 32A, 4.7 Ohm, 15V |
