Power - Max :
Current - Collector (Ic) (Max) :
Vce(on) (Max) @ Vge, Ic :
Current - Collector Pulsed (Icm) :
Gate Charge :
Td (on/off) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package Reverse Recovery Time (trr) Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) IGBT Type Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
APT25GP90BDQ1G
Per Unit
$4.86
RFQ
60,900
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation IGBT 900V 72A 417W TO247 POWER MOS 7® Not For New Designs Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-247-3 417W TO-247 [B] - 72A 900V PT 3.9V @ 15V, 25A 110A 370µJ (off) 110nC 13ns/55ns 600V, 40A, 4.3 Ohm, 15V
APT40GP90B2DQ2G
GET PRICE
RFQ
29,400
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation IGBT 900V 101A 543W TMAX POWER MOS 7® Active Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant 543W - - 101A 900V PT 3.9V @ 15V, 40A 160A 795µJ (off) 145nC 14ns/90ns 600V, 40A, 4.3 Ohm, 15V
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