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2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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71,000
One step to sell excess stocks.Or submit Qty to get quotes
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ON Semiconductor | IGBT 1200V 70A 368W TO264 | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | 368W | TO-264 | 337ns | 70A | 1200V | Trench Field Stop | 2.2V @ 15V, 35A | 105A | 2.5mJ (on), 1.7mJ (off) | 210nC | 34ns/172ns | 600V, 35A, 10 Ohm, 15V | ||||
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55,480
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | IGBT CHIP WAFER | Active | - | Standard | -40°C ~ 175°C (TJ) | Surface Mount | Die | - | Die | - | 35A | 1200V | Trench Field Stop | 2.2V @ 15V, 25A | - | - | 170nC | 50ns/280ns | 600V, 35A, 10 Ohm, 15V |