- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Channel Type :
- Driven Configuration :
- Logic Voltage - VIL, VIH :
- Current - Peak Output (Source, Sink) :
- Rise / Fall Time (Typ) :
- Applied Filters :
14 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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76,100
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|
Texas Instruments | 700V GATE DRIVER | Automotive, AEC-Q100 | Active | Tube | - | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Synchronous | High-Side or Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.8A, 2.8A | 700V | 16ns, 10ns | |||
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17,080
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|
Infineon Technologies | IC MOSFET IGBT 20V | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.3V | 60mA, 130mA | 700V | 200ns, 100ns | |||
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69,360
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|
Texas Instruments | 620-V, 1.8-A, 2.8-A HIGH-SIDE LO | - | Active | Tube | - | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Synchronous | High-Side or Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.8A, 2.8A | 700V | 16ns, 10ns | |||
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32,820
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|
Infineon Technologies | IC MOSFET IGBT 20V | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | - | 200mA, 350mA | 700V | 150ns, 50ns | |||
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29,760
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|
Infineon Technologies | IC MOSFET IGBT | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.7V | 1.9A, 2.3A | 700V | 40ns, 20ns | |||
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GET PRICE |
69,020
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|
Infineon Technologies | IC GATE DRVR HALF-BRIDGE 8SO | - | Active | Digi-Reel® | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.7V | 1.9A, 2.3A | 700V | 40ns, 20ns | ||
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46,360
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|
Infineon Technologies | IC GATE DRVR HALF-BRIDGE 8SO | - | Active | Cut Tape (CT) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.7V | 1.9A, 2.3A | 700V | 40ns, 20ns | |||
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56,300
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|
Infineon Technologies | IC GATE DRVR HALF-BRIDGE 8SO | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.7V | 1.9A, 2.3A | 700V | 40ns, 20ns | |||
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GET PRICE |
61,460
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|
Infineon Technologies | IC GATE DRVR HALF-BRIDGE 8SOIC | - | Active | Digi-Reel® | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 700V | 150ns, 50ns | ||
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43,360
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|
Infineon Technologies | IC GATE DRVR HALF-BRIDGE 8SOIC | - | Active | Cut Tape (CT) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 700V | 150ns, 50ns | |||
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76,300
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|
Infineon Technologies | IC GATE DRVR HALF-BRIDGE 8SOIC | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 700V | 150ns, 50ns | |||
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GET PRICE |
67,380
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|
Infineon Technologies | IC GATE DRVR HALF-BRIDGE 8SO | - | Active | Digi-Reel® | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.3V | 60mA, 130mA | 700V | 200ns, 100ns | ||
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59,920
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|
Infineon Technologies | IC GATE DRVR HALF-BRIDGE 8SO | - | Active | Cut Tape (CT) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.3V | 60mA, 130mA | 700V | 200ns, 100ns | |||
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24,180
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|
Infineon Technologies | IC GATE DRVR HALF-BRIDGE 8SO | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.3V | 60mA, 130mA | 700V | 200ns, 100ns |
