- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Reverse Recovery Time (trr) :
74 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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49,560
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.2V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 12pF @ 4V, 1MHz | |||
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61,460
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
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68,460
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
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68,040
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
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34,360
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
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31,640
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
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19,340
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
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73,580
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
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57,140
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
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53,820
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
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37,920
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
GET PRICE |
22,040
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
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26,700
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
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57,940
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 1µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | - | |||
|
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39,740
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.25V @ 3A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 750ns | -50°C ~ 150°C | - | |||
|
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59,140
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.25V @ 3A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 28pF @ 4V, 1MHz | |||
|
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21,060
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.25V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 28pF @ 4V, 1MHz | |||
|
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39,760
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 5A P600 | - | Obsolete | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
|
42,680
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 12A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 12A | 550mV @ 12A | 500µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | ||||
|
46,120
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 30V 12A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 12A | 550mV @ 12A | 500µA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | ||||
|
33,560
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 15A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Schottky | 15A | 550mV @ 15A | 500µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | ||||
|
48,180
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 30V 15A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Schottky | 15A | 550mV @ 15A | 500µA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | ||||
|
63,340
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 20V 15A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Schottky | 15A | 550mV @ 15A | 500µA @ 20V | 20V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | ||||
|
43,160
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.2V @ 3A | 5µA @ 400V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 30pF @ 4V, 1MHz | ||||
|
69,200
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 20V 12A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 12A | 550mV @ 12A | 500µA @ 20V | 20V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | ||||
|
29,900
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 12A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 12A | 550mV @ 12A | 500µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | ||||
|
74,580
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 30V 12A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 12A | 550mV @ 12A | 500µA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | ||||
|
42,320
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 20V 12A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 12A | 550mV @ 12A | 500µA @ 20V | 20V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | ||||
|
66,300
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.2V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | 30pF @ 4V, 1MHz | ||||
|
43,080
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.2V @ 3A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | 30pF @ 4V, 1MHz |