- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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13,680
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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64,420
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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68,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 1V @ 6A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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76,720
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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27,900
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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24,340
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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77,020
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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32,920
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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79,180
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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18,900
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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43,960
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz |
