- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
9 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
57,420
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|
GeneSiC Semiconductor | TRANS SJT 650V 16A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 330W (Tc) | 650V | 16A (Tc) (155°C) | 105 mOhm @ 16A | 1534pF @ 35V | |||
|
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65,780
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|
GeneSiC Semiconductor | TRANS SJT 650V 15A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 172W (Tc) | 650V | 15A (Tc) (155°C) | 105 mOhm @ 15A | 1534pF @ 35V | |||
|
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48,300
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|
GeneSiC Semiconductor | TRANS SJT 650V 8A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 200W (Tc) | 650V | 8A (Tc) (158°C) | 170 mOhm @ 8A | 720pF @ 35V | |||
|
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39,520
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|
GeneSiC Semiconductor | TRANS SJT 650V 7A TO-257 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 80W (Tc) | 650V | 7A (Tc) (165°C) | 170 mOhm @ 7A | 720pF @ 35V | |||
|
GET PRICE |
77,080
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|
GeneSiC Semiconductor | TRANS SJT 650V 4A TO276 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 125W (Tc) | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | 324pF @ 35V | |||
|
GET PRICE |
12,420
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|
GeneSiC Semiconductor | TRANS SJT 650V 4A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 47W (Tc) | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | 324pF @ 35V | |||
|
33,320
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|
GeneSiC Semiconductor | TRANS SJT 600V 100A | - | Active | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-258-3, TO-258AA | TO-258 | 769W (Tc) | 600V | 100A (Tc) | 25 mOhm @ 50A | - | ||||
|
21,960
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|
GeneSiC Semiconductor | TRANS SJT 300V 9A | - | Active | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-46-3 | TO-46 | 20W (Tc) | 300V | 9A (Tc) | 240 mOhm @ 5A | - | ||||
|
42,400
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|
GeneSiC Semiconductor | TRANS SJT 100V 9A | - | Active | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-46-3 | TO-46 | 20W (Tc) | 100V | 9A (Tc) | 240 mOhm @ 5A | - |